Invention Grant
- Patent Title: Self-aligned source and drain structures and method of manufacturing same
- Patent Title (中): 自对准源极和漏极结构及其制造方法
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Application No.: US13183043Application Date: 2011-07-14
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Publication No.: US08999794B2Publication Date: 2015-04-07
- Inventor: Ziwei Fang , Ying Zhang , Jeff J. Xu
- Applicant: Ziwei Fang , Ying Zhang , Jeff J. Xu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/306 ; H01L21/8238 ; H01L21/265 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L21/3065
Abstract:
An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. In an example, the method includes forming a gate structure over a substrate; forming a doped region in the substrate; performing a first etching process to remove the doped region and form a trench in the substrate; and performing a second etching process that modifies the trench by removing portions of the substrate.
Public/Granted literature
- US20130017660A1 SELF-ALIGNED SOURCE AND DRAIN STRUCTURES AND METHOD OF MANUFACTURING SAME Public/Granted day:2013-01-17
Information query
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