Invention Grant
- Patent Title: Graphene devices and methods of manufacturing the same
- Patent Title (中): 石墨烯装置及其制造方法
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Application No.: US13475098Application Date: 2012-05-18
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Publication No.: US08999812B2Publication Date: 2015-04-07
- Inventor: Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
- Applicant: Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2011-0141706 20111223
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L27/12 ; H01L29/66 ; H01L29/786

Abstract:
A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
Public/Granted literature
- US20130161587A1 GRAPHENE DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2013-06-27
Information query
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