发明授权
- 专利标题: Graphene devices and methods of manufacturing the same
- 专利标题(中): 石墨烯装置及其制造方法
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申请号: US13475098申请日: 2012-05-18
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公开(公告)号: US08999812B2公开(公告)日: 2015-04-07
- 发明人: Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
- 申请人: Wenxu Xianyu , Chang-youl Moon , Jeong-yub Lee , Chang-seung Lee
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce
- 优先权: KR10-2011-0141706 20111223
- 主分类号: H01L29/16
- IPC分类号: H01L29/16 ; H01L27/12 ; H01L29/66 ; H01L29/786
摘要:
A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.
公开/授权文献
- US20130161587A1 GRAPHENE DEVICES AND METHODS OF MANUFACTURING THE SAME 公开/授权日:2013-06-27
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