Invention Grant
US08999815B2 Method to form finFET/trigate devices on bulk semiconductor wafers
有权
在体半导体晶片上形成finFET / Trigate器件的方法
- Patent Title: Method to form finFET/trigate devices on bulk semiconductor wafers
- Patent Title (中): 在体半导体晶片上形成finFET / Trigate器件的方法
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Application No.: US14478347Application Date: 2014-09-05
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Publication No.: US08999815B2Publication Date: 2015-04-07
- Inventor: Qing Liu , Junli Wang
- Applicant: STMicroelectronics, Inc. , International Business Machines Corporation
- Applicant Address: US TX Coppell US NY Armonk
- Assignee: STMicroelectronics, Inc.,International Business Machines Corporation
- Current Assignee: STMicroelectronics, Inc.,International Business Machines Corporation
- Current Assignee Address: US TX Coppell US NY Armonk
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/8234 ; H01L21/306 ; H01L21/02 ; H01L29/66 ; H01L21/308
Abstract:
A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.
Public/Granted literature
- US20140377923A1 METHOD TO FORM FINFET/TRIGATE DEVICES ON BULK SEMICONDUCTOR WAFERS Public/Granted day:2014-12-25
Information query
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