发明授权
- 专利标题： Silicon wafer and method for heat-treating silicon wafer
- 专利标题（中）： 硅晶片和硅晶片热处理方法
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申请号： US13322080申请日： 2010-05-28
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公开(公告)号： US08999864B2公开(公告)日： 2015-04-07
- 发明人: Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
- 申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima , Hiroyuki Saito
- 申请人地址： JP Niigata
- 专利权人： Global Wafers Japan Co., Ltd.
- 当前专利权人： Global Wafers Japan Co., Ltd.
- 当前专利权人地址： JP Niigata
- 代理机构： Buchanan, Ingersoll & Rooney PC
- 优先权： JP2009-134252 20090603; JP2009-153776 20090629; JP2009-179319 20090731
- 国际申请： PCT/JP2010/003583 WO 20100528
- 国际公布： WO2010/140323 WO 20101209
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; H01L21/00 ; H01L21/322
摘要：
A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.
公开/授权文献
- US20120139088A1 SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER 公开/授权日：2012-06-07