The gate of a drive transistor having a drain and source is discharged by a circuit including a sensing circuit configured to sense a drain-to-source voltage of the drive transistor. A first current sink path is coupled to the gate of the drive transistor. The first current sink path applies a high discharge current to the gate of the drive transistor when the sensing current senses a lower drain-to-source voltage of the drive transistor. A second current sink path is also coupled to the gate of the drive transistor. The second current sink path is configured to apply a low discharge current to the gate of the drive transistor when the sensing current senses a higher drain-to-source voltage of the drive transistor.