发明授权
US09006093B2 Non-volatile memory (NVM) and high voltage transistor integration
有权
非易失性存储器（NVM）和高压晶体管集成
- 专利标题： Non-volatile memory (NVM) and high voltage transistor integration
- 专利标题（中）： 非易失性存储器（NVM）和高压晶体管集成
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申请号： US13928666申请日： 2013-06-27
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公开(公告)号： US09006093B2公开(公告)日： 2015-04-14
- 发明人: Cheong Min Hong , Sung-Taeg Kang , Jane A. Yater
- 申请人： Cheong Min Hong , Sung-Taeg Kang , Jane A. Yater
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L29/792 ; H01L29/66
摘要：
A method of making a semiconductor structure includes forming a select gate stack on a substrate. The substrate includes a non-volatile memory (NVM) region and a high voltage region. The select gate stack is formed in the NVM region. A charge storage layer is formed over the NVM region and the high voltage region of the substrate. The charge storage layer includes charge storage material between a bottom layer of dielectric material and a top layer of dielectric material. The charge storage material in the high voltage region is oxidized while the charge storage material in the NVM region remains unoxidized.
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