Invention Grant
US09006104B2 Methods of forming metal silicide regions on semiconductor devices using millisecond annealing techniques
有权
使用毫秒退火技术在半导体器件上形成金属硅化物区域的方法
- Patent Title: Methods of forming metal silicide regions on semiconductor devices using millisecond annealing techniques
- Patent Title (中): 使用毫秒退火技术在半导体器件上形成金属硅化物区域的方法
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Application No.: US13910430Application Date: 2013-06-05
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Publication No.: US09006104B2Publication Date: 2015-04-14
- Inventor: Vidmantas Sargunas
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/285
Abstract:
In one example, the method includes forming a metal layer on a silicon-containing structure, after forming the metal layer, performing an ion implantation process to implant silicon atoms into at least one of the metal layer and the silicon-containing structure and performing a first millisecond anneal process so as to form a first metal silicide region in the silicon-containing structure.
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