发明授权
- 专利标题： Solid state imaging device having a photoelectric conversion layer with plural silicon germanium layers, and method of manufacturing
- 专利标题（中）： 具有具有多个硅锗层的光电转换层的固态成像装置及其制造方法
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申请号： US13724448申请日： 2012-12-21
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公开(公告)号： US09006634B2公开(公告)日： 2015-04-14
- 发明人: Hiroki Sasaki
- 申请人： Hiroki Sasaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-182357 20120821
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L31/0312 ; H01L31/18 ; H01L27/146
摘要：
According to one embodiment, a solid state imaging device includes a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side, and a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer.