发明授权
- 专利标题: Application of relaxation voltage pulses to programmble impedance elements during read operations
- 专利标题(中): 在读取操作期间将弛豫电压脉冲施加到编程阻抗元件
-
申请号: US14197541申请日: 2014-03-05
-
公开(公告)号: US09007814B1公开(公告)日: 2015-04-14
- 发明人: Narbeh Derhacobian
- 申请人: Adesto Technologies Corporation
- 申请人地址: US CA Sunnyvale
- 专利权人: Adesto Technologies Corporation
- 当前专利权人: Adesto Technologies Corporation
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; G11C7/00 ; G11C8/16
摘要:
An integrated circuit (IC) device can include a plurality of memory cells with programmable impedance elements. A circuit can be configured to read a data value stored by an element of a memory cell by application of at least one read voltage pulse and at least one relaxation voltage pulse across the terminals of the element; wherein the read voltage pulse has a same polarity as a voltage used to program the element, the relaxation voltage pulse has a different polarity than the read voltage pulse, and neither the read or relaxation voltage pulses program the element to a particular impedance state.
信息查询