发明授权
- 专利标题: Method and apparatus for dynamically adjusting a rise-over-thermal or noise rise threshold
- 专利标题(中): 动态调整上升或上升阈值的方法和装置
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申请号: US13331395申请日: 2011-12-20
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公开(公告)号: US09008714B2公开(公告)日: 2015-04-14
- 发明人: Yeliz Tokgoz , Mehmet Yavuz , Farhad Meshkati
- 申请人: Yeliz Tokgoz , Mehmet Yavuz , Farhad Meshkati
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 主分类号: H04B7/00
- IPC分类号: H04B7/00 ; H04B17/00 ; H04W52/24
摘要:
Methods and apparatuses are provided that include adjusting rise-over-thermal (RoT) or noise rise (NR) threshold based on detecting interference from one or more devices. A device can communicate within close proximity of a femto node such that the device does not respond to power down commands from the femto node due to operating at a minimum transmit power. The device can cause the RoT or NR at the femto node to potentially rise over a threshold, however. Thus, the femto node can increase the RoT or NR threshold to allow the device to communicate with the femto node without impacting other devices communicating with the femto node. Out-of-cell interference from devices communicating with other base stations can be detected as well, and the RoT or NR threshold can be adjusted based thereon.
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