Invention Grant
- Patent Title: Memory channel selection in a multi-channel memory
- Patent Title (中): 多通道存储器中的存储器通道选择
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Application No.: US13487813Application Date: 2012-06-04
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Publication No.: US09009441B2Publication Date: 2015-04-14
- Inventor: Lin Chen , Long Chen
- Applicant: Lin Chen , Long Chen
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: G06F12/06
- IPC: G06F12/06 ; G06F9/35

Abstract:
In general, this disclosure describes techniques for selecting a memory channel in a multi-channel memory system for storing data, so that usage of the memory channels is well-balanced. A request to write data to a logical memory address of a memory system may be received. The logical memory address may include a logical page number and a page offset, where the logical page number maps to a physical page number and the logical memory address maps to a physical memory address. A memory unit out of a plurality of memory units in the memory system may be determined by performing a logical operation on one or more bits of the page offset and one or more bits of the physical page number. The data may be written to a physical memory address in the determined memory unit in the memory system.
Public/Granted literature
- US20130326158A1 MEMORY CHANNEL SELECTION IN A MULTI-CHANNEL MEMORY SYSTEM Public/Granted day:2013-12-05
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