Invention Grant
US09009634B2 Methods for fabricating integrated circuits including generating photomasks for directed self-assembly
有权
用于制造集成电路的方法,包括产生用于定向自组装的光掩模
- Patent Title: Methods for fabricating integrated circuits including generating photomasks for directed self-assembly
- Patent Title (中): 用于制造集成电路的方法,包括产生用于定向自组装的光掩模
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Application No.: US13936910Application Date: 2013-07-08
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Publication No.: US09009634B2Publication Date: 2015-04-14
- Inventor: Azat Latypov , Yi Zou , Vito Dai
- Applicant: GlobalFoundries, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F7/20

Abstract:
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating a photomask for forming a DSA directing pattern on a semiconductor substrate. The DSA directing pattern is configured to guide a self-assembly material deposited thereon that undergoes directed self-assembly (DSA) to form a DSA pattern. Generating the photomask includes, using a computing system, inputting a DSA target pattern. Using the computing system, a DSA model, an OPC model, and a MPC model, cooperatively running a DSA PC algorithm, an OPC algorithm, and a MPC algorithm to produce an output MPCed pattern for a mask writer to write on the photomask.
Public/Granted literature
- US20150012896A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING GENERATING PHOTOMASKS FOR DIRECTED SELF-ASSEMBLY Public/Granted day:2015-01-08
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