Invention Grant
- Patent Title: Coating material and method for photolithography
- Patent Title (中): 涂料和光刻方法
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Application No.: US13732944Application Date: 2013-01-02
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Publication No.: US09012132B2Publication Date: 2015-04-21
- Inventor: Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01L21/02

Abstract:
Provided is a method including providing a substrate and forming a bottom anti-reflective coating (BARC) on the substrate. The BARC includes a first portion overlying a second portion, which has a different composition than the first portion. The different composition may provide a different dissolution property of the BARC in a developer. A photoresist layer is formed on the first portion of the BARC. The photoresist layer is then irradiated and developed. The developing includes using a developer to remove a region of the photoresist layer and a region of the first and second portions of the BARC.
Public/Granted literature
- US20140186773A1 COATING MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY Public/Granted day:2014-07-03
Information query
IPC分类: