Invention Grant
- Patent Title: Methods for reproducible flash layer deposition
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Application No.: US13731452Application Date: 2012-12-31
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Publication No.: US09012298B2Publication Date: 2015-04-21
- Inventor: Sandra G. Malhotra , Hiroyuki Ode , Xiangxin Rui
- Applicant: Intermolecular, Inc. , Elpida Memory, Inc
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01G4/008 ; H01L49/02
Abstract:
A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a flash layer between the dielectric layer and the first electrode layer. A method for reducing the leakage current in DRAM Metal-Insulator-Metal capacitors includes forming a capping layer between the dielectric layer and the second electrode layer. The flash layer and the capping layer can be formed using an atomic layer deposition (ALD) technique. The precursor materials used for forming the flash layer and the capping layer are selected such they include at least one metal-oxygen bond. Additionally, the precursor materials are selected to also include “bulky” ligands.
Public/Granted literature
- US20140187018A1 Methods for Reproducible Flash Layer Deposition Public/Granted day:2014-07-03
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