发明授权
- 专利标题： Through silicon via process
- 专利标题（中）： 通过硅经过工艺
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申请号： US13593517申请日： 2012-08-24
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公开(公告)号： US09012324B2公开(公告)日： 2015-04-21
- 发明人: Jia-Jia Chen , Chi-Mao Hsu , Tsun-Min Cheng , Ching-Wei Hsu , Szu-Hao Lai , Huei-Ru Tsai , Tsai-Yu Wen , Ching-Li Yang , Chien-Li Kuo
- 申请人： Jia-Jia Chen , Chi-Mao Hsu , Tsun-Min Cheng , Ching-Wei Hsu , Szu-Hao Lai , Huei-Ru Tsai , Tsai-Yu Wen , Ching-Li Yang , Chien-Li Kuo
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.
公开/授权文献
- US20140057434A1 THROUGH SILICON VIA PROCESS 公开/授权日：2014-02-27
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