发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US14097783申请日: 2013-12-05
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公开(公告)号: US09013921B2公开(公告)日: 2015-04-21
- 发明人: Tomohisa Miyamoto , Makoto Hirano
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: JP2012-267081 20121206; JP2012-269696 20121210; JP2013-008915 20130122
- 主分类号: G11C29/04
- IPC分类号: G11C29/04 ; G11C29/42 ; G11C16/24 ; G11C5/06 ; G11C16/26 ; G06F11/10 ; G11C29/00 ; G11C16/34 ; G11C29/12 ; G11C7/10
摘要:
A semiconductor memory device includes a first data bus having a first width, and a second data bus which is separate from the first data bus and which has a second width which is different from the first width. The semiconductor memory device further includes a data transfer unit configured for transferring data from memory cells connected to a plurality of bit lines. In a first operational mode, the data transfer unit connects a first number of bit lines from among the plurality of bit lines to the first data bus to transfer the data, the first number being equal to the first width. In a second operational mode, the data transfer unit connects a second number of bit lines from among the plurality of bit lines to the second data bus to transfer the data, the second number being equal to the second width.
公开/授权文献
- US20140169092A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2014-06-19
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