Invention Grant
- Patent Title: Semiconductor apparatus
- Patent Title (中): 半导体装置
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Application No.: US14055104Application Date: 2013-10-16
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Publication No.: US09014654B2Publication Date: 2015-04-21
- Inventor: Tsutomu Kobori , Shigeki Koya , Akishige Nakajima , Yasushi Shigeno
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Keating & Bennett, LLP
- Priority: JP2011-269729 20111209
- Main IPC: H04B1/28
- IPC: H04B1/28 ; H01P1/15 ; H04B1/48

Abstract:
A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics.
Public/Granted literature
- US20140043110A1 SEMICONDUCTOR APPARATUS Public/Granted day:2014-02-13
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