Invention Grant
- Patent Title: CIGS solar cell structure and method for fabricating the same
- Patent Title (中): CIGS太阳能电池结构及其制造方法
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Application No.: US13445997Application Date: 2012-04-13
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Publication No.: US09018032B2Publication Date: 2015-04-28
- Inventor: Hsuan-Sheng Yang , Wen-Chin Lee , Li-Huan Chu
- Applicant: Hsuan-Sheng Yang , Wen-Chin Lee , Li-Huan Chu
- Applicant Address: TW Taichung
- Assignee: TSMC Solar Ltd.
- Current Assignee: TSMC Solar Ltd.
- Current Assignee Address: TW Taichung
- Agency: Duane Morris LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L31/032 ; H01L31/0749

Abstract:
A method for manufacturing a CIGS thin film photovoltaic device includes forming a back contact layer on a substrate, forming an Se-rich layer on the back contact layer, forming a precursor layer on the Se-rich layer by depositing copper, gallium and indium resulting in a first interim structure, annealing or selenizing the first interim structure, thereby forming Cu/Se, Ga/Se or CIGS compounds along the interface between the back contact layer and the precursor layer and resulting in a second interim structure, and selenizing the second interim structure, thereby converting the precursor layer into a CIGS absorber layer on the back contact layer.
Public/Granted literature
- US20130269778A1 CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-10-17
Information query
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