Strained transistor structure

Invention Grant

US09018051B2 Strained transistor structure 有权

Title translation: 应变晶体管结构

Please log in to see more content

Patent Title: Strained transistor structure
Patent Title (中): 应变晶体管结构
Application No.: US14164055

Application Date: 2014-01-24
Publication No.: US09018051B2

Publication Date: 2015-04-28
Inventor: Barry Dove
Applicant: STMicroelectronics, Inc.
Applicant Address: US TX Coppell
Assignee: STMicroelectronics, Inc.
Current Assignee: STMicroelectronics, Inc.
Current Assignee Address: US TX Coppell
Agency: Seed IP Law Group PLLC
Main IPC: H01L21/335
IPC: H01L21/335 ; H01L29/66 ; H01L21/28 ; H01L23/522 ; H01L29/423 ; H01L29/78

Abstract:

A strain enhanced transistor is provided having a strain inducing layer overlying a gate electrode. The gate electrode has sloped sidewalls over the channel region of the transistor.

Abstract(Chinese):

提供了一种应变增强型晶体管，其具有覆盖栅电极的应变诱导层。栅电极在晶体管的沟道区域上具有倾斜的侧壁。

Public/Granted literature

US20140141588A1 STRAINED TRANSISTOR STRUCTURE Public/Granted day:2014-05-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管