Methods for forming a sensor array package

Invention Grant

US09018091B2 Methods for forming a sensor array package 有权

Title translation: 形成传感器阵列包装的方法

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Patent Title: Methods for forming a sensor array package
Patent Title (中): 形成传感器阵列包装的方法
Application No.: US14252596

Application Date: 2014-04-14
Publication No.: US09018091B2

Publication Date: 2015-04-28
Inventor: Shawn X. Arnold , Terry L. Gilton , Matthew E. Last
Applicant: Apple Inc.
Applicant Address: US CA Cupertino
Assignee: Apple Inc.
Current Assignee: Apple Inc.
Current Assignee Address: US CA Cupertino
Agency: Womble Carlyle Sandridge & Rice, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763 ; G06K9/00 ; H01L23/00 ; H01L29/06 ; H01L23/24

Methods for forming a sensor array package

Abstract:

Various methods for forming a low profile assembly are described. The low profile assembly may include an integrated circuit. The integrated circuit as well as components associated with the integrated circuit may be positioned below a surface plane of a printed circuit board in which the integrated circuit is located. The integrated circuit may include bond wires configured to electrically connect the integrated circuits to other components. The low profile assembly may include forming various layers over a substrate and later removing some of the layers.

Abstract(Chinese):

描述了用于形成低轮廓组件的各种方法。薄型组件可以包括集成电路。集成电路以及与集成电路相关的部件可以位于集成电路所在的印刷电路板的表面的下方。集成电路可以包括配置成将集成电路电连接到其他部件的接合线。薄型组件可以包括在衬底上形成各种层并且随后去除一些层。

Public/Granted literature

US20140227833A1 SENSOR ARRAY PACKAGE Public/Granted day:2014-08-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）