Invention Grant
- Patent Title: Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method
- Patent Title (中): 介电薄膜形成组合物，通过该方法形成介电薄膜和介电薄膜的方法
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Application No.: US13716544Application Date: 2012-12-17
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Publication No.: US09018118B2Publication Date: 2015-04-28
- Inventor: Toshiaki Watanabe , Hideaki Sakurai , Nobuyuki Soyama , Guillaume Guegan
- Applicant: Mitsubishi Materials Corporation , STMicroelectronics(Tours) SAS
- Applicant Address: JP Tokyo FR Tours
- Assignee: Mitsubishi Materials Corporation,STMicroelectronics(Tours) SAS
- Current Assignee: Mitsubishi Materials Corporation,STMicroelectronics(Tours) SAS
- Current Assignee Address: JP Tokyo FR Tours
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV
- Priority: EP11306708 20111220
- Main IPC: C04B35/00
- IPC: C04B35/00 ; C09D5/00 ; H01B3/10 ; H01G4/33
Abstract:
A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002
Public/Granted literature
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