发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14039509申请日： 2013-09-27
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公开(公告)号： US09018756B2公开(公告)日： 2015-04-28
- 发明人: Ryuichi Ishii , Noriyuki Besshi
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 代理商 Richard C. Turner
- 优先权： JP2013-127134 20130618
- 主分类号： H01L23/34
- IPC分类号： H01L23/34 ; H01L23/373
摘要：
Stress relief layers are each provided on each circuit on an insulating substrate in a semiconductor module; a metal base coming into contact with the semiconductor module is divided into a thinned and low stiffened first metal base and a thickened and high stiffened second metal base; and the semiconductor module is bonded to the first metal base and then the first and the second metal bases are bonded to be integrated.
公开/授权文献
- US20140367845A1 SEMICONDUCTOR DEVICE 公开/授权日：2014-12-18
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