Invention Grant
- Patent Title: Process tolerant circuits
- Patent Title (中): 工艺容错电路
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Application No.: US13781759Application Date: 2013-03-01
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Publication No.: US09019751B2Publication Date: 2015-04-28
- Inventor: Peng Jin , Mohamed Hassan Abu-Rahma , Fahad Ahmed , Jaeyoon Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox LLP
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G05F3/02 ; G11C7/00 ; G11C5/14 ; G11C11/419

Abstract:
Various integrated circuits and methods of operating the integrated circuits are disclosed. The integrated circuit may include a circuit having one or more electrical parameters resulting from process variations during the manufacture of the integrated circuit, and a voltage source configured to supply a voltage to the circuit to power the circuit, wherein the voltage source is further configured to adjust the voltage as a function of the one or more electrical parameters.
Public/Granted literature
- US20140247652A1 PROCESS TOLERANT CIRCUITS Public/Granted day:2014-09-04
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