Invention Grant
US09021334B2 Calculation of analog memory cell readout parameters using code words stored over multiple memory dies
有权
使用存储在多个存储器管芯上的代码字来计算模拟存储器单元读出参数
- Patent Title: Calculation of analog memory cell readout parameters using code words stored over multiple memory dies
- Patent Title (中): 使用存储在多个存储器管芯上的代码字来计算模拟存储器单元读出参数
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Application No.: US13874995Application Date: 2013-05-01
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Publication No.: US09021334B2Publication Date: 2015-04-28
- Inventor: Barak Baum , Tomer Ish-Shalom , Micha Anholt , Eyal Gurgi , Yoav Kasorla
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10

Abstract:
A method includes, in a memory that includes two or more memory units, storing a code word of an Error Correction Code (ECC) that is representable by a plurality of check equations, such that a first part of the code word is stored in a first memory unit and a second part of the code word is stored in a second memory unit. A subset of the check equations, which operate only on code word bits belonging to the first part stored in the first memory unit, is identified. The first part of the code word is retrieved from the first memory unit, and a count of the check equations in the identified subset that are not satisfied by the retrieved first part of the code word is evaluated. One or more readout parameters, for readout from the first memory unit, are set depending on the evaluated count.
Public/Granted literature
- US20140331106A1 CALCULATION OF ANALOG MEMORY CELL READOUT PARAMETERS USING CODE WORDS STORED OVER MULTIPLE MEMORY DIES Public/Granted day:2014-11-06
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