Invention Grant
US09021603B2 Non-volatile memory for anti-cloning and authentication method for the same
有权
非易失性存储器用于抗克隆和认证方法相同
- Patent Title: Non-volatile memory for anti-cloning and authentication method for the same
- Patent Title (中): 非易失性存储器用于抗克隆和认证方法相同
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Application No.: US14043306Application Date: 2013-10-01
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Publication No.: US09021603B2Publication Date: 2015-04-28
- Inventor: Bo-Gyeong Kang , Jung-Wan Ko , Byung-Rae Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR
- Agency: The Farrell Law Firm, P.C.
- Priority: KR10-2010-0088960 20100910; KR10-2010-0099010 20101011; KR10-2011-0089051 20110902
- Main IPC: H04L9/32
- IPC: H04L9/32 ; G06F21/62 ; G06F12/14 ; G06F21/10 ; G06F21/73 ; G11B20/00

Abstract:
A method and a non-volatile memory apparatus for cloning prevention is provided. The non-volatile memory apparatus includes an Enhanced Media Identification (EMID) area, which is located in a specific area of the non-volatile memory, and stores an identification for identifying the non-volatile memory; and an EMID encoder for modifying the identification by a preset operation in conjunction with an arbitrary value, wherein the EMID area includes a first area in which reading by an external device is prevented, and a second area in which reading from the non-volatile memory by the external device is permitted in response to a read command.
Public/Granted literature
- US20140033325A1 NON-VOLATILE MEMORY FOR ANTI-CLONING AND AUTHENTICATION METHOD FOR THE SAME Public/Granted day:2014-01-30
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