发明授权
- 专利标题: Nonmagnetic material particle dispersed ferromagnetic material sputtering target
- 专利标题(中): 非磁性材料颗粒分散铁磁材料溅射靶
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申请号: US12160042申请日: 2006-12-26
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公开(公告)号: US09034153B2公开(公告)日: 2015-05-19
- 发明人: Kazuyuki Satoh
- 申请人: Kazuyuki Satoh
- 申请人地址: JP Tokyo
- 专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2006-006575 20060113
- 国际申请: PCT/JP2006/325883 WO 20061226
- 国际公布: WO2007/080781 WO 20070719
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; G11B5/851 ; H01F41/18
摘要:
Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.
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