发明授权
- 专利标题: Sputtering target and process for producing same
- 专利标题(中): 溅射目标和生产方法
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申请号: US13119867申请日: 2010-02-24
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公开(公告)号: US09034154B2公开(公告)日: 2015-05-19
- 发明人: Yuichiro Nakamura , Akira Hisano , Junnosuke Sekiguchi
- 申请人: Yuichiro Nakamura , Akira Hisano , Junnosuke Sekiguchi
- 申请人地址: JP Tokyo
- 专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2009-049188 20090303
- 国际申请: PCT/JP2010/052837 WO 20100224
- 国际公布: WO2010/101051 WO 20100910
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering target.
公开/授权文献
- US20110162971A1 Sputtering Target and Process for Producing Same 公开/授权日:2011-07-07
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