The invention prevents disconnection of data lines that traverse two-layered gate lines via an insulating film.Data lines 20 override and thereby traverse gate lines 10 with an insulating film deposited therebetween. The gate lines 10 each have a two-layered structure including a lower AlCu layer 11 and an upper MoCr layer 12. When the thickness ratio of the upper layer 12 to the lower layer 11 is in the range of 0.4 to 1.0, it is possible to prevent a decrease in the etch speed of the upper layer 12 near the side edges of the gate line 10, which occurs due to galvanization. As a result, the upper layer 12 is prevented from having an overhang. The absence of overhangs on the gate lines 10 prevents the data lines 20 from being disconnected at the intersections of the gate lines 10 and the data lines 20.