发明授权
- 专利标题: Antistatic device
- 专利标题(中): 防静电装置
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申请号: US14009875申请日: 2012-08-21
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公开(公告)号: US09036317B2公开(公告)日: 2015-05-19
- 发明人: Shingo Suzuki , Junichi Nakamura , Kensaku Asakura , Takahiro Fujimori
- 申请人: Shingo Suzuki , Junichi Nakamura , Kensaku Asakura , Takahiro Fujimori
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2011-206695 20110922; JP2012-169784 20120731
- 国际申请: PCT/JP2012/071024 WO 20120821
- 国际公布: WO2013/042502 WO 20130328
- 主分类号: H01H47/00
- IPC分类号: H01H47/00 ; H01T4/12 ; H01T1/20 ; H05K9/00 ; H02H9/06
摘要:
To provide an antistatic device having a low capacitance, good discharge characteristics, and small variations in the discharge characteristics. In a so-called gap-type antistatic device in which a space between a pair of opposing electrodes is filled with an electrostatic protection material, a discharge inducing portion has protrusions protruding from interfaces between the opposing electrodes and the insulation substrates toward the insulation substrates and has a shape protruding on both sides of the insulation substrates. The relationship among the gap distance between the electrodes, the thicknesses of the opposing electrodes, and the protrusions of the discharge inducing portion is controlled under specific conditions.
公开/授权文献
- US20140022687A1 ANTISTATIC DEVICE 公开/授权日:2014-01-23