Invention Grant
- Patent Title: Neural working memory device
- Patent Title (中): 神经工作记忆装置
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Application No.: US13555382Application Date: 2012-07-23
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Publication No.: US09037524B2Publication Date: 2015-05-19
- Inventor: Jun Haeng Lee , Chang-Woo Shin , Hyun Surk Ryu , Keun Joo Park
- Applicant: Jun Haeng Lee , Chang-Woo Shin , Hyun Surk Ryu , Keun Joo Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2011-0131604 20111209
- Main IPC: G06E1/00
- IPC: G06E1/00 ; G06N3/06

Abstract:
A spiking neuron-based working memory device is provided. The spiking neuron-based working memory device includes an input interface configured to convert input spike signals into respective burst signals having predetermined forms, and output a sequence of the burst signals, the burst signals corresponding to the input spike signals in a burst structure, and two or more memory elements (MEs) configured to sequentially store features respectively corresponding to the outputted sequence of the burst signals, each of the MEs continuously outputting spike signals respectively corresponding to the stored features.
Public/Granted literature
- US20130151451A1 NEURAL WORKING MEMORY DEVICE Public/Granted day:2013-06-13
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