Invention Grant
US09040365B2 Method for fabricating thin film transistor array substrate 有权
薄膜晶体管阵列基板的制造方法

Method for fabricating thin film transistor array substrate
Abstract:
A method of fabricating a thin film transistor array substrate is disclosed. The method includes: sequentially forming a first passivation layer, a photo acryl layer and a first transparent metal layer on the substrate provided with the source/drain electrodes and so on; forming a common electrode, which is disposed in the pixel region, and first through third contact holes, which are positioned in regions of the drain electrode, the gate pad and the data pad, respectively, using one of a half-tone mask and a diffractive mask; forming a second passivation layer on the substrate provided with the first through third contact holes; exposing the drain electrode, the gate pad and the data pad by removing the first and second passivation layers from the drain electrode region, the gate pad region and data pad region; and forming a pixel electrode on the second passivation layer opposite to the common electrode by forming a second transparent metal layer on the substrate and performing a third mask procedure for the second transparent metal layer.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理;集成电路器件或其特殊部件的制造(由预制电组件组成的组装件的制造入H05K3/00,H05K13/00)
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理(电可编程只读存储器或其多步骤的制造方法入H01L27/115)
H01L21/78 ...把衬底连续地分成多个独立的器件(改变表面物理特性或者半导体形状的切割入H01L21/304)
H01L21/82 ....制造器件,例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的,例如绝缘体
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