发明授权
US09040929B2 Charge sensors using inverted lateral bipolar junction transistors
有权
使用反向横向双极结型晶体管的充电传感器
- 专利标题： Charge sensors using inverted lateral bipolar junction transistors
- 专利标题（中）： 使用反向横向双极结型晶体管的充电传感器
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申请号： US13561671申请日： 2012-07-30
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公开(公告)号： US09040929B2公开(公告)日： 2015-05-26
- 发明人: Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- 申请人： Jin Cai , Tak H. Ning , Jeng-Bang Yau , Sufi Zafar
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： G01T1/24
- IPC分类号： G01T1/24 ; H01L31/115 ; H01L27/146
摘要：
A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.