发明授权
- 专利标题： Semiconductor light emitting device and method for manufacturing the same
- 专利标题（中）： 半导体发光器件及其制造方法
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申请号： US14207236申请日： 2014-03-12
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公开(公告)号： US09040954B2公开(公告)日： 2015-05-26
- 发明人: Tae Yun Kim , Hyo Kun Son
- 申请人： LG INNOTEK CO., LTD.
- 申请人地址： KR Seoul
- 专利权人： LG INNOTEK CO., LTD.
- 当前专利权人： LG INNOTEK CO., LTD.
- 当前专利权人地址： KR Seoul
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： KR10-2007-0086711 20070828
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/06 ; H01L33/04 ; H01L33/08 ; H01L21/02 ; H01L33/32
摘要：
A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.
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