发明授权
- 专利标题： Integrated half-bridge circuit with low side and high side composite switches
- 专利标题（中）： 集成半桥电路，具有低边和高边复合开关
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申请号： US14168926申请日： 2014-01-30
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公开(公告)号： US09041067B2公开(公告)日： 2015-05-26
- 发明人: Michael A. Briere
- 申请人： International Rectifier Corporation
- 申请人地址： US CA El Segundo
- 专利权人： International Rectifier Corporation
- 当前专利权人： International Rectifier Corporation
- 当前专利权人地址： US CA El Segundo
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L27/06 ; H01L21/8252 ; H01L27/085 ; H02M3/337 ; H01L27/088
摘要：
There are disclosed herein various implementations of an integrated half-bridge circuit with low side and high side composite switches. In one exemplary implementation, such an integrated half-bridge circuit includes a III-N body including first and second III-N field-effect transistors (FETs) monolithically integrated with and situated over a first group IV FET. The integrated half-bridge circuit also includes a second group IV FET stacked over the III-N body. The first group IV FET is cascoded with the first III-N FET to provide one of the low side and the high side composite switches, and the second group IV FET is cascoded with the second III-N FET to provide the other of the low side and the high side composite switches. The first and second III-N FETs are normally ON FETs, and the low side composite switch and the high side composite switch are normally OFF switches
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