发明授权
US09041147B2 Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus
有权
半导体衬底，薄膜晶体管，半导体电路，液晶显示装置，电致发光装置，半导体衬底制造方法以及半导体衬底制造装置
- 专利标题： Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus
- 专利标题（中）： 半导体衬底，薄膜晶体管，半导体电路，液晶显示装置，电致发光装置，半导体衬底制造方法以及半导体衬底制造装置
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申请号： US14370543申请日： 2013-01-10
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公开(公告)号： US09041147B2公开(公告)日： 2015-05-26
- 发明人: Masahiro Mitani
- 申请人： Sharp Kabushiki Kaisha
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Keating & Bennett, LLP
- 优先权： JP2012-002598 20120110
- 国际申请： PCT/JP2013/050332 WO 20130110
- 国际公布： WO2013/105614 WO 20130718
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L21/20 ; H01L21/762 ; H01L27/12 ; H01L21/3065 ; G02F1/1362 ; H01L25/075
摘要：
According to a semiconductor substrate (40), a space (A) between a plurality of Si thin film (16), which are provide apart from one another on the insulating substrate (30), is (I) larger than a difference between elongation of part of the insulating substrate which part corresponds to the space (A) and elongation of each of Si wafers (10) when a change is made from room temperature to 600° C. and (II) smaller than 5 mm. This causes an increase in a region of each of a plurality of semiconductor thin films which region has a uniform thickness, and therefore prevents transferred semiconductor layers and the insulating substrate from being fractured or chipped.
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