Invention Grant
- Patent Title: Hybrid semiconductor module structure
- Patent Title (中): 混合半导体模块结构
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Application No.: US13764356Application Date: 2013-02-11
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Publication No.: US09041176B2Publication Date: 2015-05-26
- Inventor: Yue Li , Charles D. Paynter , Ruey Kae Zang
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle S. Gallardo
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L21/00 ; H01L21/82 ; H01L49/02 ; H01L25/065
Abstract:
Some implementations provide a structure that includes a first package substrate, a first component, a second package substrate, a second component, and a third component. The first package substrate has a first area. The first component has a first height and is positioned on the first area. The second package substrate is coupled to the first package substrate. The second package substrate has second and third areas. The second area of the second package substrate vertically overlaps with the first area of the first package substrate The third area of the second package substrate is non-overlapping with the first area of the first package substrate. The second component has a second height and is positioned on the second area. The third component is positioned on the third area. The third component has a third height that is greater than each of the first and second heights.
Public/Granted literature
- US20140097512A1 HYBRID SEMICONDUCTOR MODULE STRUCTURE Public/Granted day:2014-04-10
Information query
IPC分类:
