Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
- Patent Title (中): 半导体封装及其制造方法
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Application No.: US13659181Application Date: 2012-10-24
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Publication No.: US09041189B2Publication Date: 2015-05-26
- Inventor: Meng-Tsung Lee , Chiang-Cheng Chang , Shih-Kuang Chiu
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101124878A 20120711
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/00

Abstract:
A method of fabricating a semiconductor package is provided, including: providing a carrier having a plurality of chip areas defined thereon, and forming a connection unit on each of the chip areas; disposing a semiconductor element on each of the connection units; forming an insulating layer on the carrier and the semiconductor elements; and forming on the insulating layer a circuit layer electrically connected to the semiconductor elements. Since being formed only on the chip areas instead of on the overall carrier as in the prior art, the connection units are prevented from expanding or contracting during temperature cycle, thereby avoiding positional deviations of the semiconductor elements.
Public/Granted literature
- US20140015125A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-01-16
Information query
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