Invention Grant
- Patent Title: Condition estimation device and method of generating open circuit voltage characteristic
- Patent Title (中): 条件估算装置及产生开路电压特性的方法
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Application No.: US14024532Application Date: 2013-09-11
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Publication No.: US09041405B2Publication Date: 2015-05-26
- Inventor: Kenichi Sejima , Yoshihiko Mizuta , Masashi Nakamura , Hiroshi Sekiguchi , Hidefumi Hasegawa , Shinya Kitano
- Applicant: GS Yuasa International Ltd.
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: GS Yuasa International Ltd.
- Current Assignee: GS Yuasa International Ltd.
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-208490 20120921
- Main IPC: G01N27/416
- IPC: G01N27/416 ; G01R31/36

Abstract:
A condition estimation device includes a voltage measurement circuit, memory, and a controller. The voltage measurement circuit measures an open circuit voltage (OCV) of an electric storage device. The memory is configured to store first information on a correlation between a positive electrode potential and an electric storage capacity and second information on a correlation between a negative electrode potential and an electric storage capacity. The controller is configured to: measure an OCV under charge or discharge; calculate an electric storage capacity of the electric storage device having the OCV equal to a reference voltage; correct at least one of the first information and the second information such that a potential difference at the calculated capacity is equal to the reference voltage; and generate an OCV characteristic based on the first and the second information after the at least one of the first and the second information is corrected.
Public/Granted literature
- US20140084939A1 Condition estimation device and method of generating open circuit voltage characteristic Public/Granted day:2014-03-27
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