Invention Grant
- Patent Title: Pulse generation circuit and semiconductor device
- Patent Title (中): 脉冲发生电路和半导体器件
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Application No.: US14221523Application Date: 2014-03-21
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Publication No.: US09041453B2Publication Date: 2015-05-26
- Inventor: Hiroyuki Miyake , Kouhei Toyotaka
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2013-078202 20130404
- Main IPC: H03K3/00
- IPC: H03K3/00 ; G06F1/04 ; H03K3/356 ; G09G3/36

Abstract:
Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.
Public/Granted literature
- US20140300399A1 PULSE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2014-10-09
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