发明授权
US09042165B2 Magnetoresistive effect element, magnetic memory cell using same, and random access memory
有权
磁阻效应元件，使用其的磁存储单元和随机存取存储器
- 专利标题： Magnetoresistive effect element, magnetic memory cell using same, and random access memory
- 专利标题（中）： 磁阻效应元件，使用其的磁存储单元和随机存取存储器
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申请号： US13575387申请日： 2011-01-25
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公开(公告)号： US09042165B2公开(公告)日： 2015-05-26
- 发明人: Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
- 申请人： Shoji Ikeda , Hideo Ohno , Hiroyuki Yamamoto , Kenchi Ito , Hiromasa Takahashi
- 申请人地址： JP Tokyo JP Sendai-shi, Miyagi
- 专利权人： Hitachi, Ltd.,Tohoku University
- 当前专利权人： Hitachi, Ltd.,Tohoku University
- 当前专利权人地址： JP Tokyo JP Sendai-shi, Miyagi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2010-014576 20100126
- 国际申请： PCT/JP2011/051264 WO 20110125
- 国际公布： WO2011/093252 WO 20110804
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L27/22 ; B82Y25/00 ; H01F10/32 ; H01L43/08 ; H01F10/16 ; H01F10/12
摘要：
A magnetoresistive effect element uses a perpendicularly magnetized material and has a high TMR ratio. Intermediate layers composed of an element metal having a melting point of 1600° C. or an alloy containing the metal on an outside of a structure consisting of a CoFeB layer, an MgO barrier layer, and a CoFeB layer. By inserting the intermediate layers, crystallization of the CoFeB layer during annealing is advanced from an MgO (001) crystal side, so that the CoFeB layer has a crystalline orientation in bcc (001).
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