发明授权
US09042176B2 Semiconductor memory device, system having the same and program method thereof 有权
半导体存储器件,具有相同的系统及其程序方法

  • 专利标题: Semiconductor memory device, system having the same and program method thereof
  • 专利标题(中): 半导体存储器件,具有相同的系统及其程序方法
  • 申请号: US13948366
    申请日: 2013-07-23
  • 公开(公告)号: US09042176B2
    公开(公告)日: 2015-05-26
  • 发明人: Jung Woon Shim
  • 申请人: SK hynix Inc.
  • 申请人地址: KR Gyeonggi-do
  • 专利权人: SK Hynix Inc.
  • 当前专利权人: SK Hynix Inc.
  • 当前专利权人地址: KR Gyeonggi-do
  • 代理机构: William Park & Associates Ltd.
  • 优先权: KR10-2012-0148380 20121218
  • 主分类号: G11C16/04
  • IPC分类号: G11C16/04 G11C16/24 G11C16/34
Semiconductor memory device, system having the same and program method thereof
摘要:
The present invention relates to a semiconductor memory device and a program method thereof. The program method according to an embodiment of the present invention includes: precharging a plurality of cell strings by providing a positive voltage to the plurality of cell strings through a common source line; and performing a program operation on selected memory cells by applying a program pulse to the selected memory cells.
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