发明授权
- 专利标题： Method for producing semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11988305申请日： 2006-06-26
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公开(公告)号： US09048103B2公开(公告)日： 2015-06-02
- 发明人: Yoshio Shimoida , Hideaki Tanaka , Tetsuya Hayashi , Masakatsu Hoshi , Shigeharu Yamagami , Noriaki Kawamoto , Takayuki Kitou , Mineo Miura , Takashi Nakamura
- 申请人： Yoshio Shimoida , Hideaki Tanaka , Tetsuya Hayashi , Masakatsu Hoshi , Shigeharu Yamagami , Noriaki Kawamoto , Takayuki Kitou , Mineo Miura , Takashi Nakamura
- 申请人地址： JP Kanagawa-Ken JP Kyoto-Fu
- 专利权人： NISSAN MOTOR CO., LTD.,ROHM CO., LTD.
- 当前专利权人： NISSAN MOTOR CO., LTD.,ROHM CO., LTD.
- 当前专利权人地址： JP Kanagawa-Ken JP Kyoto-Fu
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2005-196533 20050705
- 国际申请： PCT/JP2006/313167 WO 20060626
- 国际公布： WO2007/004595 WO 20070111
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/3105 ; H01L29/78 ; H01L21/04 ; H01L29/267 ; H01L29/66 ; H01L29/16 ; H01L29/772
摘要：
A method for producing a semiconductor device (20) is disclosed. The semiconductor device (20) includes: 1) a semiconductor substrate (1, 2), 2) a hetero semiconductor area (3) configured to contact a first main face (1A) of the semiconductor substrate (1, 2) and different from the semiconductor substrate (1, 2) in band gap, 3) a gate electrode (7) contacting, via a gate insulating film (6), a part of a junction part (13) between the hetero semiconductor area (3) and the semiconductor substrate (1, 2), 4) a source electrode (8) configured to connect to the hetero semiconductor area (3), and 5) a drain electrode (9) configured to make an ohmic connection with the semiconductor substrate (1, 2). The method includes the following sequential operations: i) forming the gate insulating film (6); and ii) nitriding the gate insulating film (6).
公开/授权文献
- US20090026497A1 Method for Producing Semiconductor Device 公开/授权日：2009-01-29
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