Invention Grant
- Patent Title: Vertical polysilicon-germanium heterojunction bipolar transistor
- Patent Title (中): 垂直多晶硅 - 锗异质结双极晶体管
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Application No.: US13923906Application Date: 2013-06-21
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Publication No.: US09048280B2Publication Date: 2015-06-02
- Inventor: Jin Cai , Kevin K. Chan , Wilfried E. Haensch , Tak H. Ning
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/8224
- IPC: H01L21/8224 ; H01L29/737 ; H01L29/66 ; H01L21/762 ; H01L21/8249 ; H01L29/06 ; H01L29/08 ; H01L29/165
Abstract:
A vertical heterojunction bipolar transistor (HBT) includes doped polysilicon having a doping of a first conductivity type as a wide-gap-emitter with an energy bandgap of about 1.12 eV and doped single crystalline Ge having a doping of the second conductivity type as the base having the energy bandgap of about 0.66 eV. Doped single crystalline Ge having of doping of the first conductivity type is employed as the collector. Because the base and the collector include the same semiconductor material, i.e., Ge, having the same lattice constant, there is no lattice mismatch issue between the collector and the base. Further, because the emitter is polycrystalline and the base is single crystalline, there is no lattice mismatch issue between the base and the emitter.
Public/Granted literature
- US20130288447A1 VERTICAL POLYSILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2013-10-31
Information query
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