Invention Grant
US09048410B2 Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
有权
包括磁道的存储器件，其独立地包括具有畴壁的多个磁畴和形成存储器件的方法，所述存储器件包括磁道，该磁迹分别包括具有畴壁的多个磁畴
- Patent Title: Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
- Patent Title (中): 包括磁道的存储器件，其独立地包括具有畴壁的多个磁畴和形成存储器件的方法，所述存储器件包括磁道，该磁迹分别包括具有畴壁的多个磁畴
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Application No.: US13906857Application Date: 2013-05-31
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Publication No.: US09048410B2Publication Date: 2015-06-02
- Inventor: Livio Baldi , Marcello Mariani
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/02
Abstract:
A method of forming a memory device having magnetic tracks individually comprising a plurality of magnetic domains having domain walls, includes forming an elevationally outer substrate material of uniform chemical composition. The uniform composition material is partially etched into to form alternating regions of elevational depressions and elevational protrusions in the uniform composition material. A plurality of magnetic tracks is formed over and which angle relative to the alternating regions. Interfaces of immediately adjacent of the regions individually form a domain wall pinning site in individual of the magnetic tracks. Other methods, including memory devices independent of method, are disclosed.
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Information query
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