Invention Grant
US09053940B2 Mask for forming semiconductor pattern, patterning system with the same, and method of fabricating semiconductor device using the same
有权
用于形成半导体图案的掩模，具有该掩模的图案化系统以及使用其的制造半导体器件的方法
- Patent Title: Mask for forming semiconductor pattern, patterning system with the same, and method of fabricating semiconductor device using the same
- Patent Title (中): 用于形成半导体图案的掩模，具有该掩模的图案化系统以及使用其的制造半导体器件的方法
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Application No.: US14097916Application Date: 2013-12-05
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Publication No.: US09053940B2Publication Date: 2015-06-09
- Inventor: Jiwon Han
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2013-0078455 20130704
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02
Abstract:
A mask for forming a semiconductor pattern includes a first body portion provided with a first through hole for injecting a semiconductor material and a second body portion provided with a second through hole for exhausting a gas. As the result of the gas suction through the second through hole, the semiconductor material may be crystallized to form a semiconductor pattern on a base substrate. A thickness of the semiconductor pattern can be controlled by a space between the mask and the base substrate, and a crystal structure of the semiconductor pattern can be controlled by an amount of the gas to be exhausted through the second through hole.
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