Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US14256232Application Date: 2014-04-18
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Publication No.: US09053948B2Publication Date: 2015-06-09
- Inventor: Kyoung-Hee Kim , Ho-Ki Lee , Gilheyun Choi , Kyu-Hee Han , Jongwon Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2013-0044320 20130422
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/764 ; H01L23/522 ; H01L23/532

Abstract:
A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.
Public/Granted literature
- US20140312456A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-10-23
Information query
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