Invention Grant
- Patent Title: Elongated bump structure in semiconductor device
- Patent Title (中): 半导体器件中的凸起凸块结构
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Application No.: US13228094Application Date: 2011-09-08
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Publication No.: US09053989B2Publication Date: 2015-06-09
- Inventor: Chen-Cheng Kuo , Chita Chuang , Tsung-Shu Lin , Chen-Shien Chen
- Applicant: Chen-Cheng Kuo , Chita Chuang , Tsung-Shu Lin , Chen-Shien Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00

Abstract:
A device includes a chip attached to a substrate. The chip includes a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar. The substrate includes a conductive trace and a mask layer overlying the conductive trace, wherein the mask layer has an opening exposing a portion of the conductive trace. An interconnection is formed between the conductive pillar and the exposed portion of the conductive trace. The opening has a first dimension (d1) measured along the long axis of the conductive pillar and a second dimension (d2) measured along the short axis of the conductive pillar. A ratio of L to d1 is greater than a ratio of W to d2.
Public/Granted literature
- US20130062755A1 ELONGATED BUMP STRUCTURE IN SEMICONDUCTOR DEVICE Public/Granted day:2013-03-14
Information query
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