发明授权
- 专利标题: Elongated bump structure in semiconductor device
- 专利标题(中): 半导体器件中的凸起凸块结构
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申请号: US13228094申请日: 2011-09-08
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公开(公告)号: US09053989B2公开(公告)日: 2015-06-09
- 发明人: Chen-Cheng Kuo , Chita Chuang , Tsung-Shu Lin , Chen-Shien Chen
- 申请人: Chen-Cheng Kuo , Chita Chuang , Tsung-Shu Lin , Chen-Shien Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/00
摘要:
A device includes a chip attached to a substrate. The chip includes a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar. The substrate includes a conductive trace and a mask layer overlying the conductive trace, wherein the mask layer has an opening exposing a portion of the conductive trace. An interconnection is formed between the conductive pillar and the exposed portion of the conductive trace. The opening has a first dimension (d1) measured along the long axis of the conductive pillar and a second dimension (d2) measured along the short axis of the conductive pillar. A ratio of L to d1 is greater than a ratio of W to d2.
公开/授权文献
- US20130062755A1 ELONGATED BUMP STRUCTURE IN SEMICONDUCTOR DEVICE 公开/授权日:2013-03-14
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