发明授权
- 专利标题: Radiation-emitting semiconductor chip
- 专利标题(中): 辐射发射半导体芯片
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申请号: US13123421申请日: 2009-10-29
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公开(公告)号: US09054016B2公开(公告)日: 2015-06-09
- 发明人: Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
- 申请人: Jürgen Moosburger , Norwin von Malm , Patrick Rode , Lutz Höppel , Karl Engl
- 申请人地址: DE
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE
- 代理机构: DLA Piper LLP (US)
- 优先权: DE102008059580 20081128; DE102009006177 20090126
- 国际申请: PCT/DE2009/001524 WO 20091029
- 国际公布: WO2010/060404 WO 20100603
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L27/15 ; H01L25/16 ; H01L33/08 ; H01L33/38
摘要:
A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.
公开/授权文献
- US20110260205A1 RADIATION-EMITTING SEMICONDUCTOR CHIP 公开/授权日:2011-10-27
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