发明授权
- 专利标题： Semiconductor device with diagonal conduction path
- 专利标题（中）： 具有对角导电路径的半导体器件
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申请号： US13605214申请日： 2012-09-06
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公开(公告)号： US09054149B2公开(公告)日： 2015-06-09
- 发明人: Xin Lin , Daniel J. Blomberg , Jiangkai Zuo
- 申请人： Xin Lin , Daniel J. Blomberg , Jiangkai Zuo
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Lempia Summerfield Katz LLC
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L29/66 ; H01L21/225
摘要：
A method of fabricating a bipolar transistor including emitter and base regions having first and second conductivity types, respectively, includes forming an isolation region at a surface of a semiconductor substrate, the isolation region having an edge that defines a boundary of an active area of the emitter region, and implanting dopant of the second conductivity type through a mask opening to form the base region in the semiconductor substrate. The mask opening spans the edge of the isolation region such that an extent to which the dopant passes through the isolation region varies laterally to establish a variable depth contour of the base region.
公开/授权文献
- US20140061858A1 Semiconductor Device with Diagonal Conduction Path 公开/授权日：2014-03-06
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