发明授权
- 专利标题: Curved wafer processing on method and apparatus
- 专利标题(中): 方法和装置上的弯曲晶片加工
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申请号: US13404819申请日: 2012-02-24
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公开(公告)号: US09054188B2公开(公告)日: 2015-06-09
- 发明人: I-Ming Chang , Wen-Huei Guo , Chih-Hao Chang , Shou-Zen Chang , Clement Hsingjen Wann , Tung Ying Lee , Cheng-Long Chen , Jui-Chien Huang
- 申请人: I-Ming Chang , Wen-Huei Guo , Chih-Hao Chang , Shou-Zen Chang , Clement Hsingjen Wann , Tung Ying Lee , Cheng-Long Chen , Jui-Chien Huang
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/683 ; H01L21/687 ; H01L21/31 ; H01L29/78 ; H01L29/10 ; H01L29/66
摘要:
An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.
公开/授权文献
- US20130224952A1 Curved Wafer Processing on Method and Apparatus 公开/授权日:2013-08-29